# Difference: IrradiatedSensorResults (15 vs. 16)

#### Revision 162015-03-19 - PeterManning

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\rho = \frac{1}{N q_{e} \mu},
Changed:
<
<
where is the carrier mobility of the silicon bulk. For p-type, the main carriers are holes, with a mobility of 480 . For n-type, the main carriers are electrons, with a mobility of 1350 .
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where is the carrier mobility of the silicon bulk. For p-type, the main carriers are holes, with a mobility of 450 . For n-type, the main carriers are electrons, with a mobility of 1400 .

## Summary of current measurements before irradiation (Amps)

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