Difference: IrradiatedSensorResults (15 vs. 16)

Revision 162015-03-19 - PeterManning

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 \rho = \frac{1}{N q_{e} \mu},
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where $\mu$ is the carrier mobility of the silicon bulk. For p-type, the main carriers are holes, with a mobility of 480 $ cm^2 / V s $. For n-type, the main carriers are electrons, with a mobility of 1350 $ cm^2 / V s $.
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where $\mu$ is the carrier mobility of the silicon bulk. For p-type, the main carriers are holes, with a mobility of 450 $ cm^2 / V s $. For n-type, the main carriers are electrons, with a mobility of 1400 $ cm^2 / V s $.
 

Summary of current measurements before irradiation (Amps)

 
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