Difference: IrradiatedSensorResults (16 vs. 17)

Revision 172015-03-19 - PeterManning

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Sensor Depletion Voltage Doping Concentration (atoms/cm3) Resistivity (Ohm-cm)
MSL3092-1-MS2 183.203 5.13x1014 8.70026
Changed:
<
<
MSL3091-7-MBP1 172.492 4.98x1014 27.8927
MSL3091-7-MBP2 175.835 5.93x1014 23.4176
>
>
MSL3091-7-MBP1 172.492 5.17x1014 26.8261
MSL3091-7-MBP2 175.835 5.15x1014 26.9483
 
MSL3091-5-MS2 177.448 4.90x1014 28.3488
MSL3092-1-MS1 180.556 5.05x1014 8.83501
MSl3091-8-MS1 176.011 4.98x1014 27.8927
MSL3091-7-MS1 175.804 4.87x1014 28.5404
MSL3091-7-MS2 177.903 5.04x1014 27.5742
Changed:
<
<
MSL3091-8-MBP2 178.739 5.93x1014 23.4176
>
>
MSL3091-8-MBP2 178.739 5.16x1014 26.9111
 
MSL3091-8-MBP1 176.011 4.98x1014 27.8927

The depletion voltage is derived from the $\frac{1}{C^2}$ vs. Voltage relationship. The doping concentration and resistivity are calculated using the geometry of the sensor, the primary carrier mobility (holes for n-in-p and electrons for p-in-n), as well as the calculated depletion voltage.

 
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