PIXEL conference

The CLIC vertex detector

• Speaker: Dominik Dannheim on behalf of the CLICdp collaboration
• Abstract: The CLIC vertex detector must have excellent spatial resolution, full geometrical coverage extending to low polar angles, extremely low mass, low occupancy facilitated by time-tagging, and sufficient heat removal from sensors and readout. These considerations, together with the physics needs and beam structure of CLIC, push the technological requirements to the limits. A detector concept based on hybrid pixel-detector technology is under development for the CLIC vertex detector. It comprises fast, low-power and small-pitch readout ASICs implemented in 65 nm CMOS technology (CLICpix) coupled to ultra-thin planar or active HV-CMOS sensors via low-mass interconnects. The power dissipation of the readout chips is reduced by means of power pulsing, allowing for a cooling system based on forced gas flow. This talk reviews the requirements and design optimisation for the CLIC vertex detector and gives an overview of recent R&D achievements in the domains of cooling, supports, powering, detector integration, sensors and readout.
• Slides

Calibration, Simulation and test-beam characterization for hybrid-pixel readout assemblies with ultra-thin sensors

• Speaker: Mathieu Benoit on behalf of the CLICdp collaboration
• Abstract: A vertex-detector concept based on the hybrid planar pixel-detector technology is currently under development for the proposed Compact Linear Collider (CLIC). The low material budget of only 0.2% X0 per layer corresponds to an equivalent thickness of 200 um of silicon and includes the infrastructure for powering and mechanical support. To reach this material budget, sensors and readout ASICs will each have to be thinned down to approximately 50 um. In a first phase of R&D, assemblies were produced using thin planar pixel sensors (50-300 um) hybridised to Timepix readout ASICs. Both standard thickness ASICs and ASICs thinned to 100 um are used. Sensors include active-edge sensors from Advacam with 50 um thickness and Micron semiconductor sensors with 100 um thickness hybridised by IZM. The assemblies have been calibrated with sources and X-ray fluorescence measurements and characterised in beam telescope tests at DESY with a 5.5 GeV electron beam. In this talk we present the current status of sensor calibration, test-beam analysis and comparison with GEANT4 simulation using a sensor and electronics digitization model. We also show first measurement results for the recently produced CCPDV3 active HV-CMOS sensors matching the 25 um pitch of the 65 nm CLICpix readout ASIC prototypes.
• Slides