Trento 2016 - CLICdp abstracts

TCAD simulations of High-Voltage-CMOS pixel structures for the CLIC vertex detector

• Speaker: Matthew Buckland
• Status: Accepted for oral presentation
• Abstract: CLIC is a proposed electron-positron collider with a centre of mass energy of up to 3 TeV. The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. The principal challenges are: a point resolution of 3 microns, ultra-low mass (~0.2% X0 per layer), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. Capacitively coupled active pixel sensors with 25 microns pitch implemented in a commercial 180 nm High-Voltage CMOS process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this presentation 2d and 3d TCAD simulation results will be presented of characteristics of the sensor prototype CCPDv3, such as the electric field, leakage current, capacitance, transient response to minimum ionising particles and charge-collection efficiency.
• Slides

Recent results with hybrid pixel assemblies for the CLIC vertex detector

• Speaker: Andreas Nurnberg
• Status: Accepted for oral presentation
• Abstract: The physics aims at the proposed multi-TeV CLIC linear e+e- collider impose high precision requirements on the vertex detector. Furthermore it has to match the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of 3 microns, 10 ns time stamping capabilities, ultra-low mass (0.2% X0 per layer), very low power dissipation (compatible with air-flow cooling) and pulsed power operation. The R&D for the pixel detector follows an integrated approach addressing simultaneously the physics requirements and the engineering constraints. Two types of hybrid pixel detectors with ultra-small pitch (25*25 microns) and analogue readout are explored. Both make use of a dedicated readout ASIC (CLICpix), developed in 65 nm technology. CLICpix is either bump bonded to planar silicon sensors, or AC coupled through a thin layer of glue to active HV-CMOS sensors. The feasibility of ultra-thin sensor layers (50-300 microns) is studied using assemblies with active-edge and slim-edge sensors hybridised to Timepix and Timepix3 readout ASICs. Results of recent beam tests and laboratory calibrations of a variety of assemblies with different sensor thicknesses are presented.
• Slides