Measurement results of the irradiated mini-sensors
This page contains measurement results (IV/CV, etc.) of the mini-sensors that were irradiated at Boston General Hospital. These sensors are going to be used in the upcoming October testbeam.
Sensor descriptions and general information
All of the mini-sensors that were irradiated were supplied by Micron Semicondoctor. The sensor labels correspond to the type of silicon substrate (n or p), which wafer they were cut from, the type of mini-sensor (MS or MBP, explained below), as well as the location of this sensor on the half-moon structure it was cut from. The labels are oragnized as follows,
<company><substrate ID>-<wafer ID>-<sensor type><sensor location>
Definitions:
- MSL: Micron Semiconductor Limited
- 309x: 3091 corresponds to n-in-p type while 3092 corresponds to p-in-n type
- MS: Mini-sensor, 30 um strip width, 80 um strip pitch, 1.115cm x 1.125cm
- MBP: mini-beam pipe sensor, 30 um strip width, 80 um strip pitch. Locations 1 and 2 have different guard ring structures, shown below. The cutout has a radius of about 5mm.
Schematic of the half-moon structure the sensors were cut from. From the left we have MBP1, MS1, MS2 and MBP2. The smaller square structures are diodes.
Zoomed in schematic of the guard ring of the MBP1 sensors:
Zoomed in schematic of the guard ring of the MBP2 sensors:
Irradiation information
Irradiation Group |
L1 |
L2 |
L3 |
L4 |
Radiation dose (Mrad) |
1.57 |
5.77 |
10.10 |
23.31 |
Proton fluence [x1014 cm-2] |
0.29 |
1.06 |
1.86 |
4.29 |
Neutron fluence eqv. [x1014 cm-2] |
0.27 |
1.00 |
1.75 |
4.03 |
The protons were 226
MeV while the neutron equivalent is given for 1
MeV neutrons.
Sensor Characteristics
Sensor |
Depletion Voltage |
Doping Concentration (atoms/cm3) |
Resistivity (Ohm-cm) |
MSL3092-1-MS2 |
183.203 |
5.13x1014 |
8.70026 |
MSL3091-7-MBP1 |
172.492 |
5.17x1014 |
26.8261 |
MSL3091-7-MBP2 |
175.835 |
5.15x1014 |
26.9483 |
MSL3091-5-MS2 |
177.448 |
4.90x1014 |
28.3488 |
MSL3092-1-MS1 |
180.556 |
5.05x1014 |
8.83501 |
MSl3091-8-MS1 |
176.011 |
4.98x1014 |
27.8927 |
MSL3091-7-MS1 |
175.804 |
4.87x1014 |
28.5404 |
MSL3091-7-MS2 |
177.903 |
5.04x1014 |
27.5742 |
MSL3091-8-MBP2 |
178.739 |
5.16x1014 |
26.9111 |
MSL3091-8-MBP1 |
176.011 |
4.98x1014 |
27.8927 |
The depletion voltage is derived from the

vs. Voltage relationship. The doping concentration and resistivity are calculated using the geometry of the sensor, the primary carrier mobility (holes for n-in-p and electrons for p-in-n), as well as the calculated depletion voltage.
The doping concentration can be derived from the slope of a plot of

vs. V for

,
where

is the dielectric constant of silicon, 1.034x10
-14 F/cm
3 and

is the charge of the electron, 1.6x10
-19 C, and A is the area of the silicon.
The resistivity is given by,
where

is the carrier mobility of the silicon bulk. For p-type, the main carriers are holes, with a mobility of 450

. For n-type, the main carriers are electrons, with a mobility of 1400

.
Summary of current measurements before irradiation (Amps)
|
Voltage (V) |
Sensor |
50 |
100 |
150 |
200 |
250 |
300 |
350 |
400 |
450 |
500 |
MSL3092-1-MS2 |
6.263E-08 |
6.622E-08 |
6.761E-08 |
6.852E-08 |
6.931E-08 |
6.988E-08 |
7.048E-08 |
7.117E-08 |
7.181E-08 |
7.236E-08 |
MSL3091-7-MBP1 |
2.74E-08 |
2.95E-08 |
3.02E-08 |
3.12E-08 |
3.26E-08 |
3.41E-08 |
3.59E-08 |
3.81E-08 |
3.98E-08 |
4.14E-08 |
MSL3091-7-MBP2 |
2.99E-08 |
3.19E-08 |
3.33E-08 |
3.42E-08 |
3.54E-08 |
3.60E-08 |
3.68E-08 |
3.77E-08 |
3.89E-08 |
4.01E-08 |
MSL3091-5-MS2 |
3.03E-08 |
3.35E-08 |
3.44E-08 |
3.49E-08 |
3.59E-08 |
3.83E-08 |
4.09E-08 |
4.41E-08 |
4.46E-08 |
4.99E-08 |
MSL3092-1-MS1 |
3.48E-08 |
4.04E-08 |
4.42E-08 |
4.68E-08 |
4.90E-08 |
5.08E-08 |
5.24E-08 |
5.38E-08 |
5.53E-08 |
5.65E-08 |
MSl3091-8-MS1 |
3.48E-08 |
3.73E-08 |
3.92E-08 |
4.04E-08 |
4.20E-08 |
4.36E-08 |
4.51E-08 |
4.68E-08 |
4.88E-08 |
5.13E-08 |
MSL3091-7-MS1 |
2.98E-08 |
3.34E-08 |
3.70E-08 |
5.68E-08 |
2.97E-07 |
3.53E-07 |
3.95E-07 |
4.31E-07 |
4.65E-07 |
4.75E-07 |
MSL3091-7-MS2 |
3.18E-08 |
3.65E-08 |
3.95E-08 |
4.17E-08 |
4.37E-08 |
4.54E-08 |
4.70E-08 |
4.83E-08 |
4.99E-08 |
5.18E-08 |
MSL3091-8-MBP2 |
2.88E-08 |
3.05E-08 |
3.18E-08 |
3.24E-08 |
3.33E-08 |
3.43E-08 |
3.51E-08 |
3.60E-08 |
3.71E-08 |
3.85E-08 |
MSL3091-8-MBP1 |
2.24E-08 |
2.47E-08 |
2.67E-08 |
2.81E-08 |
2.94E-08 |
3.17E-08 |
3.49E-08 |
3.79E-08 |
4.07E-08 |
4.39E-08 |
Summary of current measurements after irradation (Amps)
|
|
Voltage (V) |
|
Sensor |
50 |
100 |
150 |
200 |
250 |
300 |
350 |
400 |
450 |
500 |
L1 |
MSL3092-1-2 |
2.428E-05 |
3.284E-05 |
3.512E-05 |
3.746E-05 |
4.187E-05 |
5.184E-05 |
6.955E-05 |
9.893E-05 |
1.485E-04 |
2.247E-04 |
MSL3091-7-MBP1 |
1.897E-05 |
2.643E-05 |
2.927E-05 |
3.033E-05 |
3.129E-05 |
3.232E-05 |
3.360E-05 |
3.528E-05 |
3.745E-05 |
4.029E-05 |
MSL3091-7-MBP2 |
1.918E-05 |
2.673E-05 |
2.967E-05 |
3.079E-05 |
3.179E-05 |
3.288E-05 |
3.422E-05 |
3.595E-05 |
3.817E-05 |
4.103E-05 |
MSL3091-5-MS2 |
2.286E-05 |
3.203E-05 |
3.591E-05 |
3.725E-05 |
3.868E-05 |
4.047E-05 |
4.271E-05 |
4.556E-05 |
4.917E-05 |
5.366E-05 |
|
L2 |
MSL3092-1-MS1 |
1.131E-04 |
1.211E-04 |
1.260E-04 |
1.302E-04 |
1.349E-04 |
1.431E-04 |
1.600E-04 |
1.928E-04 |
2.495E-04 |
3.331E-04 |
MSl3091-8-MS1 |
7.915E-05 |
1.083E-04 |
1.225E-04 |
1.289E-04 |
1.332E-04 |
1.372E-04 |
1.414E-04 |
1.460E-04 |
1.512E-04 |
1.570E-04 |
|
L3 |
MSL3091-7-MS1 |
1.259E-04 |
1.762E-04 |
2.047E-04 |
2.200E-04 |
2.300E-04 |
2.382E-04 |
2.461E-04 |
2.543E-04 |
2.628E-04 |
2.719E-04 |
|
L4 |
MSL3091-7-MS2 |
2.258E-04 |
3.245E-04 |
4.011E-04 |
4.545E-04 |
4.879E-04 |
5.128E-04 |
5.339E-04 |
5.530E-04 |
5.715E-04 |
5.900E-04 |
MSL3091-8-MBP2 |
1.927E-04 |
2.752E-04 |
3.388E-04 |
3.823E-04 |
4.095E-04 |
4.299E-04 |
4.472E-04 |
4.629E-04 |
4.780E-04 |
4.930E-04 |
MSL3091-8-MBP1 |
1.905E-04 |
2.723E-04 |
3.357E-04 |
3.803E-04 |
4.084E-04 |
4.293E-04 |
4.470E-04 |
4.631E-04 |
4.786E-04 |
4.939E-04 |
Summary of capacitance measurements before irradiation (pF)
|
Voltage (V) |
Sensor |
30 |
50 |
70 |
90 |
110 |
130 |
150 |
170 |
190 |
210 |
230 |
250 |
MSL3092-1-MS2 |
119.99 |
91.97 |
77.39 |
68.16 |
61.66 |
56.81 |
52.98 |
49.90 |
48.15 |
47.87 |
47.76 |
47.70 |
MSL3091-7-MBP1 |
98.65 |
75.13 |
63.07 |
55.47 |
50.10 |
46.14 |
42.97 |
40.65 |
40.05 |
39.90 |
39.80 |
39.74 |
MSL3091-7-MBP2 |
99.25 |
75.47 |
63.30 |
55.60 |
50.20 |
46.19 |
43.00 |
40.60 |
39.92 |
39.77 |
39.66 |
39.60 |
MSL3091-5-MS2 |
126.01 |
94.57 |
78.62 |
68.68 |
61.86 |
56.75 |
52.74 |
49.56 |
48.36 |
48.14 |
48.02 |
47.91 |
MSL3092-1-MS1 |
119.38 |
91.59 |
77.03 |
67.81 |
61.35 |
56.53 |
52.75 |
49.69 |
48.09 |
47.82 |
47.73 |
47.67 |
MSl3091-8-MS1 |
122.07 |
92.94 |
77.78 |
68.27 |
61.66 |
56.66 |
52.74 |
49.62 |
48.59 |
48.39 |
48.26 |
48.19 |
MSL3091-7-MS1 |
126.20 |
94.71 |
78.58 |
68.65 |
61.79 |
56.64 |
52.62 |
49.49 |
48.46 |
48.27 |
48.14 |
48.08 |
MSL3091-7-MS2 |
130.60 |
96.24 |
79.83 |
69.63 |
62.63 |
57.40 |
53.34 |
50.13 |
48.91 |
48.69 |
48.56 |
48.50 |
MSL3091-8-MBP2 |
101.47 |
80.11 |
65.98 |
57.41 |
51.57 |
47.23 |
43.88 |
41.19 |
40.02 |
39.81 |
39.71 |
39.62 |
MSL3091-8-MBP1 |
82.80 |
67.30 |
58.70 |
51.50 |
46.40 |
43.10 |
40.00 |
37.50 |
36.70 |
36.70 |
36.70 |
36.90 |
Summary of capacitance measurements after irradiation (pF)
|
|
Voltage (V) |
|
Sensor |
30 |
50 |
70 |
90 |
110 |
130 |
150 |
170 |
190 |
210 |
230 |
250 |
L1 |
MSL3092-1-MS2 |
326.66 |
224.23 |
174.61 |
143.43 |
121.28 |
102.68 |
88.73 |
84.35 |
81.82 |
79.61 |
77.60 |
75.70 |
MSL3091-7-MBP1 |
116.53 |
86.16 |
71.22 |
61.83 |
54.52 |
47.30 |
43.30 |
43.37 |
43.36 |
43.30 |
43.28 |
43.22 |
MSL3091-7-MBP2 |
117.10 |
86.55 |
71.56 |
62.07 |
54.79 |
47.58 |
43.24 |
43.22 |
43.24 |
43.20 |
43.13 |
43.06 |
MSL3091-5-MS2 |
159.39 |
114.99 |
93.90 |
81.13 |
72.16 |
64.74 |
56.82 |
51.30 |
51.34 |
51.53 |
51.49 |
51.44 |
|
L2 |
MSL3092-1-MS1 |
989.05 |
765.80 |
551.57 |
441.32 |
356.10 |
215.53 |
151.64 |
136.16 |
127.65 |
121.02 |
147.49 |
42.19 |
MSl3091-8-MS1 |
569.30 |
366.44 |
283.79 |
236.22 |
204.95 |
182.37 |
164.36 |
148.98 |
134.54 |
114.02 |
21.48 |
4.87 |
|
L3 |
MSL3091-7-MS1 |
812.57 |
612.50 |
473.80 |
394.04 |
341.76 |
304.71 |
276.33 |
31.64 |
5.78 |
2.78 |
1.70 |
1.15 |
|
L4 |
MSL3091-7-MS2 |
527.53 |
839.06 |
891.14 |
804.06 |
714.95 |
639.75 |
578.46 |
529.78 |
490.72 |
457.77 |
430.09 |
406.02 |
MSL3091-8-MBP2 |
550.59 |
785.35 |
739.47 |
643.88 |
561.46 |
497.34 |
448.02 |
409.40 |
378.23 |
352.13 |
329.72 |
310.54 |
MSL3091-8-MBP1 |
435.53 |
653.87 |
597.91 |
533.97 |
474.03 |
423.99 |
41.86 |
7.43 |
3.50 |
2.13 |
1.45 |
1.05 |
Total time spent above freezing after irradiation
This is the total amount of time the sensors have been above freezing after we placed them in our freezer here at Syracuse. This does not take into account the shipping time between Boston General and Syracuse. I still need to find this information.
Sensor |
Time |
MSL3092-1-MS2 |
92.75 hours |
MSL3091-7-MBP1 |
0 |
MSL3091-7-MBP2 |
0 |
MSL3091-5-MS2 |
0 |
MSL3092-1-MS1 |
92.75 hours |
MSl3091-8-MS1 |
89 hours |
MSL3091-7-MS1 |
89.75 hours |
MSL3091-7-MS2 |
89.75 hours |
MSL3091-8-MBP2 |
82 hours |
MSL3091-8-MBP1 |
82 hours |
Detector board information
Each detector board contains two mini sensors. When referring to sensor 1 and sensor 2, if you are looking from the daughter board to the detector board, the left most is sensor 1 and the right most is sensor 2. (This is the labeling on the daughterboard, but does not match the readout scheme of the Beetle chip using the Aliabava system. So, these
have been swapped in the list below)
Cartoons with definitions of Beetle Chip Num, Channel Num, Stage Motion direction for
Board 1,
Board 2,
Board 3,
Board 4
Board Number
- Milano daughter board
- Sensor 0: 3092-1-MS2 p-in-n. Apply positive HV to the backplane. Irradiation level 1.
- Sensor 1: 3092-1-MS1 p-in-n. Apply positive HV to the backplane. Irradiation level 2.
- Syracuse daughter board
- Sensor 0: 3091-8-MS1 n-in-p. Apply negative HV to the backplane. Irradiation level 2.
- Sensor 1: 3091-10-MBP2 n-in-p. Apply negative HV to the backplane. Un-irradiated.
- Zurich daughter board
- Sensor 0: 3091-7-MS2. n-in-p. Apply negative HV to the backplane. Irradiation level 4.
- Sensor 1: 3091-7-MS1. n-in-p. Apply negative HV to the backplane. Irradiation level 3.
- Syracuse daughter board
- Sensor 0: 3091-8-MBP2. n-in-p. Apply negative HV to the backplane. Irradiation level 4.
- Sensor 1: 3091-8-MBP1. n-in-p. Apply negative HV to the backplane. Irradiation level 4.
--
PeterManning - 29 Sep 2014