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Summary of measurements performed to the XFAB prototype:
   * Regarding the technology itself, the transistors of these technology were characterized before,during and after X-rays irradiation. It was performed at the X-rays facility at CERN. IV curves were performed before and after irradiation.
   * Regarding the sensor part:
      1 IV measurements on rings (different T)<br /><br />A set of scripts (keithley.py, iv_keythey.py, config_keithley.yalm) allow to perform IV measurements remotly from a keithley device. <br />config_keithley.yalm, monitoring.py allows to perform Current-time measurements from a keithley device.<br /><br />
      1 Signal/Noise distribution (methods: ADC counter of GPAC/ mV with Oscilloscope)<br /><br />A method for measuring the signal distribution was to use the AD counter of the GPAC. The script single_pix_spectra.py allows you to measure that. (Done in Bonn)<br /><br />Other way to get the signal distribution is to analyze directly the signal wave from the oscilloscope. That was implemented for the testbeam. The scripts config.yalm, algorithms.py and waveform.py allow these measurements. Two different algoritms were implemented to analyze such a waveform as the XFAB chip produces.<br />a) smoothing+reset_removal+derivative+gaussian fit<br />b)smooting+reset_removal+fit to a f(x)<br /><br /> 
      1 Source measurements (methods: ADC of GPAC/analysis from Oscilloscope)<br />The source measurement allows to calibrate the sample. mV--&gt;e- <br />Since a photon looses all its energy in the material. 
      1 Testbeam measurements (SPS October 100x100 pitch, SPS November 50x50 pitch)
      1 IV after testbeam
      1 PS irradiation (Current-time monitoring while irradiation, IV before, during and after proton irradiation
      1 ____________________________
-- Main.SoniaFernandez - 2015-01-12

Topic revision: r2 - 2015-01-13 - SoniaFernandez

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