Transistor characterization before and during Xrays irradiation was performed to the XFAB technology.

  1. IV measurements on rings (different T)
  2. Signal/Noise distribution (ADC counter of GPAC/ mV with Oscilloscope)
  3. Source measurements (ADC of GPAC/analysis from Oscilloscope method)
  4. Testbeam measurements (SPS October 100x100 pitch, SPS November 50x50 pitch)
  5. IV after testbeam
  6. PS irradiation (Current-time monitoring while irradiation, IV before, during and after)
  7. -- SoniaFernandez - 2015-01-12
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Topic revision: r1 - 2015-01-12 - unknown
 
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